? semiconductor components industries, llc, 2006 march, 2006 ? rev. 2 1 publication order number: PZT3906T1/d PZT3906T1 preferred device general purpose transistor pnp silicon features ? pb ? free package is available maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 40 vdc collector ? base voltage v cbo ? 40 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 200 madc thermal characteristics characteristic symbol max unit total device dissipation (note 1) t a = 25 c p d 1.5 12 w mw/ c thermal resistance junction ? to ? ambient (note 1) r ja 83.3 c/w thermal resistance junction ? to ? lead #4 r ja 35 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 with 1 oz and 713 mm 2 of copper area. http://onsemi.com collector 2, 4 1 base 3 emitter preferred devices are recommended choices for future use and best overall value. ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. device package shipping ? ordering information PZT3906T1 sot ? 223 1000 / tape & reel PZT3906T1g sot ? 223 (pb ? free) 1000 / tape & reel marking diagram 1 ayw 2a 2a = specific device code a = assembly location y = year w = work week = pb ? free package (note: microdot may be in either location)
PZT3906T1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics (note 2) collector ? emitter breakdown voltage (note 2) (i c = ? 1.0 madc, i b = 0) v (br)ceo ? 40 ? vdc collector ? base breakdown voltage (i c = ? 10 adc, i e = 0) v (br)cbo ? 40 ? emitter ? base breakdown voltage (i e = ? 10 adc, i c = 0) v (br)ebo ? 5.0 ? base cutoff current (v ce = ? 30 vdc, v eb = ? 3.0 vdc) i bl ? ? 50 nadc collector cutoff current (v ce = ? 30 vdc, v eb = ? 3.0 vdc) i cex ? ? 50 on characteristics (note 2) dc current gain (i c = ? 0.1 madc, v ce = ? 1.0 vdc) (i c = ? 1.0 madc, v ce = ? 1.0 vdc) (i c = ? 10 madc, v ce = ? 1.0 vdc) (i c = ? 50 madc, v ce = ? 1.0 vdc) (i c = ? 100 madc, v ce = ? 1.0 vdc) h fe 60 80 100 60 30 ? ? 300 ? ? ? collector ? emitter saturation voltage (i c = ? 10 madc, i b = ? 1.0 madc) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? 0.25 ? 0.4 vdc base ? emitter saturation voltage (i c = ? 10 madc, i b = ? 1.0 madc) (i c = ? 50 madc, i b = ? 5.0 madc) v be(sat) ? 0.65 ? ? 0.85 ? 0.95 small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 madc, v ce = ? 20 vdc, f = 100 mhz) f t 250 ? mhz output capacitance (v cb = ? 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 4.5 pf input capacitance (v eb = ? 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 10 input impedance (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h ie 2.0 12 k voltage feedback ratio (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h re 0.1 10 x 10 ? 4 small ? signal current gain (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h fe 100 400 ? output admittance (i c = ? 1.0 madc, v ce = ? 10 vdc, f = 1.0 khz) h oe 3.0 60 mhos noise figure (i c = ? 100 adc, v ce = ? 5.0 vdc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db switching characteristics delay time (v cc = ? 3.0 vdc, v be = 0.5 vdc, i c = ? 10 madc, i b1 = ? 1.0 madc) t d ? 35 ns rise time t r ? 35 storage time (v cc = ? 3.0 vdc, i c = ? 10 madc, i b1 = i b2 = ? 1.0 madc) t s ? 225 fall time t f ? 75 2. pulse width 300 s, duty cycle 2.0%.
PZT3906T1 http://onsemi.com 3 figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors
PZT3906T1 http://onsemi.com 4 typical transient characteristics figure 3. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c figure 5. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 6. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v typical audio small ? signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 7. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 8. r g , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a
PZT3906T1 http://onsemi.com 5 h parameters (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) figure 9. current gain i c , collector current (ma) 70 100 200 300 50 figure 10. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe ?4 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0
PZT3906T1 http://onsemi.com 6 typical static characteristics figure 13. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c ?55 c figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 15. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 16. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 ?0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 ?1.0 ?1.5 ?2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c ?55 c to +25 c +25 c to +125 c ?55 c to +25 c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/ c) v
PZT3906T1 http://onsemi.com 7 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue l style 1: pin 1. base 2. collector 3. emitter 4. collector a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 PZT3906T1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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